Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP-Reference-Cited by-同舟云学术

Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP

Published:2020-08-15 Issue:16 Volume:20 Page:9234-9244
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Braga Osvaldo M.^ORCID,Delfino Cristian A.,Kawabata Rudy M. S.,Pinto Luciana Dornelas,Vieira Gustavo S.^ORCID,Pires Mauricio P.,de Souza Patricia Lustoza^ORCID,Marega Euclydes,Carlin John A.,Krishna Sanjay

Funder

Federal Brazilian Agency through the Financiadora de Inovação e Pesquisa

Fundação de Amparo à Pesquisa do Estado de São Paulo

Brazilian National Council for Scientific and Technological Development

Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/9143302/09063502.pdf?arnumber=9063502

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