Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/8/087302/pdf
Reference9 articles.
1. Monte Carlo simulation of electron transport in gallium nitride
2. Emerging gallium nitride based devices
3. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation;Chinese Physics B;2015-02
2. Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates;Chinese Physics Letters;2013-09
3. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al 2 O 3 Laminated Dielectric by Atomic Layer Deposition;Chinese Physics Letters;2012-02
4. Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics;Chinese Physics Letters;2011-01
5. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors;Acta Physica Sinica;2011
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