High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
3. High-field effects in silicon nitride passivated GaN MODFETs
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1. High-efficiency AlN/GaN MIS-HEMTs with SiNx insulator grown in-situ for millimeter wave applications;J INFRARED MILLIM W;2023
2. Electrical and Thermal Degradation and Reliability of GaN HEMTs;Nitride Wide Bandgap Semiconductor Material and Electronic Devices;2016-10-14
3. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress;Microelectronics Reliability;2016-09
4. Hot-electron reliability improvement using perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN HEMTs;Current Applied Physics;2014-08
5. A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage;Chinese Physics Letters;2012-10
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