Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates-Reference-Cited by-同舟云学术

Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates

Published:2013-09 Issue:9 Volume:30 Page:097303
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Chu Fu-Tong,Chen Chao,Zhou Wei,Liu Xing-Zhao

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/30/9/097303/pdf

Reference18 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage

3. Various Recipes of SiN x Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

4. Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

5. AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate Dielectrics

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