AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate Dielectrics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/2/026101/pdf
Reference23 articles.
1. Ideas in Ecology and Evolution – A new open-access model dedicated to the rapid release of creativity in peer-review publication
2. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
3. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
4. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate
5. Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Retention of high dielectric constant sodium beta alumina via solution combustion: Role of aluminum ions complexation with fuel;Ceramics International;2018-02
2. Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT;Journal of Semiconductors;2016-06
3. Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT;Chinese Physics Letters;2014-03
4. Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates;Chinese Physics Letters;2013-09
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