Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation-Reference-Cited by-同舟云学术

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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

Published:2015-02 Issue:2 Volume:24 Page:027302
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Zheng Xue-Feng,Fan Shuang,Chen Yong-He,Kang Di,Zhang Jian-Kun,Wang Chong,Mo Jiang-Hui,Li Liang,Ma Xiao-Hua,Zhang Jin-Cheng,Hao Yue

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/24/2/027302/pdf

Reference16 articles.

1. High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

2. GaN HEMT reliability

3. Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits

4. Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate;Chinese Physics B;2023-02-01

2. Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method;physica status solidi (a);2021-02-22

3. Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N 2 plasma surface treatment;Solid-State Electronics;2018-06

4. Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias‐controllable field plate;physica status solidi (a);2017-06-16

5. Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch;Chinese Physics B;2017-01

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