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Analytical drain current model for nanoscale strained‐Si/SiGe MOSFETs

  • Published:2009-03-06 Issue:2 Volume:28 Page:353-371
  • ISSN:0332-1649
  • Container-title:COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
  • language:en
  • Short-container-title:COMPEL

Author:

Batwani Himanshu,Gaur Mayank,Jagadesh Kumar M.

Publisher

Emerald

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System;Nanomaterials;2023-05-18

2. A Complete Analytical RF Model for Nanoscale Semiconductor-On-Insulator MOSFET;Silicon;2022-11-28

3. Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

4. Strain Engineering in Modern Field Effect Transistors;Electrical and Electronic Devices, Circuits, and Materials;2021-03-11

5. Three-Layered Channel with Strained Si/SiGe/Si HOI MOSFET;International Conference on Intelligent Computing and Smart Communication 2019;2019-12-20
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