A charge-sheet model of the MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. An accurate two-dimensional numerical analysis of the MOS transistor
2. Steady State Mathematical Theory for the Insulated Gate Field Effect Transistor
3. Theory of insulated-gate field-effect transistors near and beyond pinch-off
4. Application of 2-dimensional solutions of the Shockley-Poisson equation to inversion-layer m.o.s.t. devices
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