Ionization-enhanced crystallization of phosphorus implanted silicon layers
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577908234496
Reference18 articles.
1. Watkins, G. D. Symposium on Radiation Effects in Semiconductor Components. Vol. 1, pp.A1Toulouse: Journees ďElectronique.
2. Theory of recombination-enhanced defect reactions in semiconductors
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Retardation and Enhancement in Lateral Solid Phase Epitaxy of Si on SiO2 by MeV Electron Beam Irradiation;MRS Proceedings;1992
2. Ionization Assisted Transformations of Defects in Carbon Implanted Silicon;Physica Status Solidi (a);1989-03-16
3. On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon;Journal of Applied Physics;1988-07-15
4. Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layers;Applied Physics Letters;1987-06-15
5. Electron irradiation‐activated low‐temperature annealing of phosphorus‐implanted silicon;Applied Physics Letters;1986-04-28
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