On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341959
Reference36 articles.
1. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
2. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals
3. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
4. Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization
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