Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97732
Reference16 articles.
1. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
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3. Incorporation of implanted In and Sb in silicon during amorphous layer regrowth
4. Direct observation of laser‐induced solid‐phase epitaxial crystallization by time‐resolved optical reflectivity
5. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
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