Electron irradiation‐activated low‐temperature annealing of phosphorus‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96447
Reference8 articles.
1. Production and beam annealing of damagein carbon implanted silicon. II
2. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
3. Damage dependent electrical activation of phosphorus implanted in silicon
4. Damage dependent electrical activation of phosphorus implanted in silicon
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