Ionization Assisted Transformations of Defects in Carbon Implanted Silicon-Reference-Cited by-同舟云学术

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Ionization Assisted Transformations of Defects in Carbon Implanted Silicon

Published:1989-03-16 Issue:1 Volume:112 Page:405-410
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Krynicki J.,Rzewuski H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Ionization enhanced annealing in P and As implanted Si layers

2. Ionization enhanced crystallization in amorphous germanium

3. Ionization enhanced annealing in phosphorus implanted silicon

4. Ionization-enhanced crystallization of phosphorus implanted silicon layers

5. , , , , , and , Proc. of E-MRS 1985 (p. 181).

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