A novel SOI MESFET to spread the potential contours towards the drain
Author:
Affiliation:
1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2020.1727025
Reference27 articles.
1. Increase in the scattering of electric field lines in a new high voltage SOI MESFET
2. High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier
3. A theoretical study on the linearity of the I d -T curve of a SiC MESFET for sensor application
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1. Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications;PLOS ONE;2024-04-26
2. Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics;International Journal of Electronics;2023-10-06
3. Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets;Electrical Engineering;2023-05-13
4. Comparison of V-I characteristics between MOSFET and MESFET by varying the substrate thickness;THE 4TH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS;2023
5. Physical Analysis on the DC and RF Operations of a Novel SOI-MESFET with Protruded Gate and Dual Wells;Silicon;2021-05-25
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