Author:
Mohtaram Mohaddeseh,Orouji Ali A.,Ramezani Zeinab,Keighobadi Danial
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference38 articles.
1. MacWilliams KP, Plummer JD (1991) Device physics and technology of complementary silicon MESFET's for VLSI applications. IEEE Trans Electron Devices 38:2619–2631
2. Marshall J, Meindl J (1988) A sub-and near-threshold current model for silicon MESFETs. IEEE Trans Electron Devices 35:388–390
3. Sze SM (2008) Semiconductor devices: physics and technology. John Wiley & Sons, Hoboken
4. Soares RA, Foreword By-Podell A (1988) GaAs MESFET circuit design. Artech House, Inc, Norwood
5. Balijepalli A, Ervin J, Lepkowski W, Cao Y, Thornton TJ (2009) Compact modeling of a PD SOI MESFET for wide temperature designs. Microelectron J 40:1264–1273
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