A Novel Silicon on Insulator MESFET with Multi-∏ Regions to Improve DC and RF Performances
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01880-8.pdf
Reference17 articles.
1. Rudenko TE, Nazarov AN, Lysenko VS (2020) The advancement of silicon-on-insulator(SOI) devices and their basic properties. Semicond Phys Quantum Electron Optoelectron 23(3):227–252. https://doi.org/10.15407/spqeo23.03.227
2. Amiri IS, Mohammadi H (2019) Device Physics, Modeling, technology, and analysis for silicon MESFET. Springer Nat Switz AG. https://doi.org/10.1007/978-3-030-04513-5
3. Mahrous H, Fedawy M, El Mona S, Fikry W, Gad M (2019) Design of a 90 GHz SOI fin electro-optic modulator for high-speed applications. Appl Sci 9:4917. https://doi.org/10.3390/app9224917
4. Zhang W, Li L, Qiao M, Zhan Z, Cheng Sh, Zhang S, He B, Luo X, Li Z, Zhang B (2019) Novel high voltage ultra-thin SOI-LDMOS with sectional linearly doped drift region. IEEE Electron Device Lett 40(7):1151–1154. https://doi.org/10.1109/LED.2019.2919074
5. Naderi A, Heirani F (2017) Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF Characteristics. Superlattice Microst 111:1022–1033. https://doi.org/10.1016/j.spmi.2017.07.058
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1. Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs;Indian Journal of Pure & Applied Physics;2023
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