A theoretical study on the linearity of the I d -T curve of a SiC MESFET for sensor application

Author:

Dutta Sutanu

Funder

Vidyasagar University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Silicon carbide and diamond for high temperature device applications;Willander;J. Mater. Sci. Mater. Electron.,2006

2. Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step P-buffer Layer;Xiao-Chuan;Chin. Phys. B,2011

3. Simulation of 4H-SiC MESFET for high power and high frequency response;Chattopadhyay;J. Semicond. Technol. Sci.,2008

4. High power SiC MESFET using a dual P-buffer layer for an S-band power amplifier;Xiao-Chuan;Chin. Phys. B,2013

5. 4H-SiC N-Channel JFET for operation in high temperature Environments;Lien;J. Electron Devices Soc.,2014

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1. Analysing the Effects of Varying Parameters in a MESFET;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28

2. A novel SOI MESFET to spread the potential contours towards the drain;International Journal of Electronics;2020-02-19

3. Reply to the “comments on -a theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application”;Superlattices and Microstructures;2018-11

4. Comments on “A theoretical study on the linearity of the Id-T curve of a SiC MESFET for sensor application”;Superlattices and Microstructures;2018-11

5. A theoretical study on the temperature-dependent RF performance of a SiC MESFET;International Journal of Electronics;2018-01-20

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