Comparison of V-I characteristics between MOSFET and MESFET by varying the substrate thickness

Author:

Akhil Chandaka,Yakkala Bhaskarrao

Publisher

AIP Publishing

Reference35 articles.

1. Potential Fault Diagnosis Method and Classification Accuracy Detection of IGBT Device Based on Improved Single Hidden Layer Feedforward Neural Network

2. A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage

3. MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications

4. Z. Zhang and Y.-F. Liu, High Frequency MOSFET Gate Drivers: Technologies and Applications. IET, 2017. [Online]. Available: https://books.google.com/books/about/High_Frequency_MOSFET_Gate_Drivers.html?hl=&id=Zek5DwAAQBAJ

5. M. Peralta, Modeling Mosfet Gain Compression and Quasi-sat Behavior: High Voltage Mosfet Model for Lightly Doped Drains. Createspace Independent Publishing Platform, 2018. [Online]. Available: https://books.google.com/books/about/Modeling_Mosfet_Gain_Compression_and_Qua.html?hl=&id=-IbhuwEACAAJ

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