Raman Scattering of Reactive-ion Etched GaAs-Reference-Cited by-同舟云学术

Raman Scattering of Reactive-ion Etched GaAs

Published:1988-03 Issue:3 Volume:35 Page:365-370
ISSN:0950-0340
Container-title:Journal of Modern Optics
language:en
Short-container-title:Journal of Modern Optics

Author:

Watt M.,Sotomayor-Torres C.M.,Cheung R.,Wilkinson C.D.W.,Arnot H.E.G.,Beaumont S.P.

Publisher

Informa UK Limited

Subject

Atomic and Molecular Physics, and Optics

Link

http://www.tandfonline.com/doi/pdf/10.1080/09500348814550401

Reference7 articles.

1. Wilkinson, C.D. and Beaumont, S.P. 1986.The Physics and Fabrication of Microstructures and Microdevices, Springer Proceedings in Physics, Edited by: Kelly, M.J. and Weisbuch, C. Vol. 13, 36–36. Berlin: Springer-Verlag.

2. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs

3. Reactive ion etching of GaAs in CCl4/H2and CCl4/O2

4. Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer;Advanced Optical Materials;2022-04-15

2. Issues in Etching Compound and Si-based Devices;Japanese Journal of Applied Physics;2002-06-30

3. Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching;Defect and Diffusion Forum;2000-08

4. Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy;Journal of Applied Physics;1999-06-15

5. Raman Scattering as a Diagnostic Tool of Semiconductor Nanofabrication;Optical Spectroscopy of Low Dimensional Semiconductors;1997