Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370685
Reference51 articles.
1. Coupled plasmon and phonon in the accumulation layer of InAs(110) cleaved surfaces
2. Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
3. Charge Accumulation at InAs Surfaces
4. Accumulation layer profiles at InAs polar surfaces
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