Degradation-free ferroelectric Pb(Zr, Ti)O3 thin film capacitors with IrO2 top electrode-Reference-Cited by-同舟云学术

Degradation-free ferroelectric Pb(Zr, Ti)O3 thin film capacitors with IrO2 top electrode

Published:1998-09 Issue:1-4 Volume:21 Page:83-95
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Fujisaki Yoshihisa¹,Kushida-Abdelghafar Keiko¹,Miki Hiroshi¹,Shimamoto Yasuhiro¹

Affiliation:

1. a Central Research Laboratory, Hitachi Ltd. , P.O. Box 2, Kokubunji, Tokyo , 185 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589808202053

Reference19 articles.

1. A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories

2. Process and properties of Pt/Pb(Zr, Ti)O3/Pt integrated ferroelectric capacitors

3. A 7.03-μm/sup 2/ Vcc/2-plate nonvolatile DRAM cell with a Pt/PZT/Pt/TiN capacitor patterned by one-mask dry etching

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1. Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions;Journal of Applied Physics;2019-08-21

2. Electric Double Layer Formed by Polarized Ferroelectric Thin Films;ACS Applied Materials & Interfaces;2013-04-01

3. Recovery Characteristics of Hydrogen-Damaged ( Pb , La ) ( Zr , Ti ) O 3 Capacitors with Pt and IrO2 Top Electrodes;Journal of The Electrochemical Society;2001-05-30

4. Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin-film capacitors with Pt- or Ir-based top electrodes;Journal of Materials Research;2001-04

5. Polarization profile of RF-sputtered self-polarized PZT thin films;Integrated Ferroelectrics;2001-01