A 7.03-μm/sup 2/ Vcc/2-plate nonvolatile DRAM cell with a Pt/PZT/Pt/TiN capacitor patterned by one-mask dry etching-Reference-Cited by-同舟云学术

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A 7.03-μm/sup 2/ Vcc/2-plate nonvolatile DRAM cell with a Pt/PZT/Pt/TiN capacitor patterned by one-mask dry etching

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Container-title:1996 Symposium on VLSI Technology. Digest of Technical Papers
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Author:

Shoji K.,Moniwa M.,Yamashita H.,Kisu T.,Kaga T.,Torri K.,Kumihashi T.,Morimoto T.,Kawakami H.,Gotoh Y.,Itoga T.,Tanaka T.,Yokoyama N.,Kure T.,Ohkura M.,Fujisaki Y.,Sakata K.,Kimura K.

Publisher

Widerkehr & Associates

Link

http://xplorestaging.ieee.org/ielx5/3767/11001/00507781.pdf?arnumber=507781

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4. Effect of LaNiO3Top Electrode on the Resistance of Pb(Zr,Ti)O3Ferroelectric Capacitor to Hydrogen Damage and Fatigue;Japanese Journal of Applied Physics;2002-03-15

5. Etch Behavior of Pb(Zr[sub X]Ti[sub 1−X])O[sub 3] Films Using a TiO[sub 2] Hard Mask;Journal of The Electrochemical Society;2001

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