A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories-Reference-Cited by-同舟云学术

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A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories

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Container-title:1995 Symposium on VLSI Technology. Digest of Technical Papers
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Author:

Tanabe N.,Matsuki T.,Saitoh S.,Takeuchi T.,Kobayashi S.,Nakajima T.,Maejima Y.,Hayashi Y.,Amanuma K.,Hase T.,Miyasaka Y.,Kunio T.

Publisher

Japan Soc. Appl. Phys

Link

http://xplorestaging.ieee.org/ielx3/4018/11536/00520888.pdf?arnumber=520888

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration technology for ferroelectric memory devices;Microelectronics Reliability;2003-03

2. Effect of LaNiO3Top Electrode on the Resistance of Pb(Zr,Ti)O3Ferroelectric Capacitor to Hydrogen Damage and Fatigue;Japanese Journal of Applied Physics;2002-03-15

3. Preparation of SiN passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD;Thin Solid Films;2001-09

4. Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films;Journal of Materials Research;2001-07

5. Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics;IEEE Transactions on Electron Devices;2001

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