Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions-Reference-Cited by-同舟云学术

Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

Published:2019-08-21 Issue:7 Volume:126 Page:074105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nomura Kenji¹,Wang Wensheng²^ORCID,Nakamura Ko²,Eshita Takashi²³,Takai Kazuaki²,Ozawa Soichiro²,Yamaguchi Hideshi¹,Mihara Satoru²,Hikosaka Yukinobu²,Saito Hitoshi²,Kataoka Yuji¹,Kojima Manabu²

Affiliation:

1. Devices and Materials Laboratory, Fujitsu Laboratories Ltd., Kawasaki 211-8588, Japan

2. Technology Division, System Memory Company, Fujitsu Semiconductor Ltd., Yokohama 222-0033, Japan

3. Wakayama University, Wakayama 640-8510, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5091501

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2. Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors

3. Thickness dependence of piezoelectric properties of BiFeO3films fabricated using rf magnetron sputtering system

4. Comparison of effective transverse piezoelectric coefficientse31,fof Pb(Zr,Ti)O3thin films between direct and converse piezoelectric effects

5. Theoretical analysis of linear and nonlinear piezoelectric vibrational energy harvesters for human walking

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