Author:
Eshita Takashi,Wang Wensheng,Hikosaka Yukinobu
Reference192 articles.
1. Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors;Aggarwal;Appl. Phys. Lett.,1998
2. Domain pinning: Comparison of Hafnia and PZT based ferroelectrics;Alexe;Appl. Phys. Lett.,2001
3. Theory and experiment of antiferroelectric (AFE) Si-doped hafnium oxide (HSO) enhanced floating-gate memory;Ali;IEEE Trans. Electron Devices,2019
4. Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics;Alia;Appl. Phys. Lett.,2018
5. Anderson, J.R., 1951 (Filling). Ferroelectric Storage Device and Circuit. US2717372A.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献