Measurement of gap states in undoped a-SiGe: H alloys by modulated photocurrent spectroscopy
Author:
Affiliation:
1. a Electrical Engineering , Akashi Technological College , Akashi , Hyogo , 674 , Japan
2. b Faculty of Engineering Science , Osaka University , Toyonaka , Osaka , 560 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818908206048
Reference24 articles.
1. Gap states in undoped amorphous silicon studied by below-gap modulated photocurrent spectroscopy
2. Steady state and transient transport in a-Si, Ge : H, F alloys
3. Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques
4. V. A two stage model for deep level capture
5. Transient photocurrent study of the dangling bond centre in undoped amorphous silicon
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1. Electron emission from deep traps in hydrogenated amorphous silicon and silicon-germanium: Meyer-Neldel behavior and ionization entropy;MRS Proceedings;2011
2. Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films;Journal of Applied Physics;2005-08
3. Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance–Voltage Method;Japanese Journal of Applied Physics;1998-02-15
4. Temperature dependence of the dc conductivity of undopeda-Si1−xGex:H alloys: Influence of metastability;Physical Review B;1991-04-15
5. Relation between thermal equilibrium temperature and bandgap in undoped hydrogenated amorphous silicon-based alloys;Philosophical Magazine Letters;1990-08
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