Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance–Voltage Method
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Published:1998-02-15
Issue:Part 1, No. 2
Volume:37
Page:435-439
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Deki Hidenori,Nakagawa Kouji,Kohno Atsushi,Miyazaki Seiichi,Hirose Masataka
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering