Relation between thermal equilibrium temperature and bandgap in undoped hydrogenated amorphous silicon-based alloys
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839008203749
Reference9 articles.
1. Thermal relaxation of the electric conductivity in amorphous silicon-germanium alloys
2. Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon
3. Thermal equilibration in hydrogenated amorphous silicon-based films
4. Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous Silicon
5. Defect equilibria in undopeda-Si:H
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ESR characterization;Current Topics in Amorphous Materials;1993
2. Defect densities and hydrogen diffusion in hydrogenated amorphous Si‐based alloys;Applied Physics Letters;1991-12-23
3. Temperature dependence of the dc conductivity of undopeda-Si1−xGex:H alloys: Influence of metastability;Physical Review B;1991-04-15
4. Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H;Journal of Non-Crystalline Solids;1991-01
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