Equilibrium temperature and related defects in intrinsic glow discharge amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98406
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5. Recombination processes ina-Si:H: Spin-dependent photoconductivity
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1. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry;The Journal of Chemical Physics;2014-08-28
2. In situ ellipsometry study of the kinetics of hydrogen plasma interaction with a-Si:H thin films: A particular temperature-dependence;Applied Physics Letters;2010-11-22
3. Investigation of light induced degradation in hydrogenated amorphous silicon-germanium alloy thin films using temperature dependent photoconductivity;physica status solidi (c);2010-02-23
4. Accelerated Stress Testing of a-Si:H TFTs for Amoled Displays;MRS Proceedings;2004
5. Meyer-Neldel rule in charge-trapping metastability inp-type hydrogenated amorphous silicon;Physical Review B;2002-11-15
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