Temperature dependence of the dc conductivity of undopeda-Si1−xGex:H alloys: Influence of metastability
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9792/fulltext
Reference31 articles.
1. Design considerations for low band gap a-Sige:H alloy solar cells
2. Amorphous silicon-germanium diodes for optical detection
3. Studies of the density of states at the band edges and in the pseudo-gap in a-SiGe:H alloys by combined photothermal deflection spectroscopy and X-ray spectroscopy
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1. The properties of a-SiGe:H films fabricated by a novel deposition method;Journal of Physics: Condensed Matter;2001-07-20
2. Influence of deposition parameters on defect formation in a-SiGe:H alloys;Philosophical Magazine B;1995-05
3. Phenomenological model for equilibrium and metastable defects in undoped hydrogenated amorphous silicon;Solid State Communications;1994-01
4. Stability of hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from helium-diluted silane;Philosophical Magazine B;1993-04
5. Thermal quenching and relaxation in doped hydrogenated amorphous silicon deposited by plasma‐enhanced chemical vapor deposition from He‐diluted silane;Applied Physics Letters;1993-02-08
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