Stability of hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from helium-diluted silane-Reference-Cited by-同舟云学术

Stability of hydrogenated amorphous silicon deposited by plasma-enhanced chemical vapour deposition from helium-diluted silane

Published:1993-04 Issue:4 Volume:67 Page:497-511
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Meaudre R.¹,Meaudre M.¹,Vignoli S.¹,Cabarrocas P. Roca²,Bouizem Y.³,Theye M. L.³

Affiliation:

1. a Département de Physique des Matériaux (Unité associée au CNRS) , Université de Lyon I , 43 boulevard du 11 Novembre 1918, 69622 , Villeurbanne Cedex , France

2. b Laboratoire De Physique Des Interfaces Et Des Couches Minces (Unité Propre De Recherche Cnrs 258), Ecole Polytechnique , 91128 , Palaiseau Cedex , France

3. c Laboratoire ďOptique des Solides (Unité associée au CNRS 781), Université P. et M. Curie , 4 Place Jussieu, 75252 , Paris Cedex 05 , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819308207688

Reference24 articles.

1. Chapter 3 Optical Properties of Defect States in a-Si: H

2. The kink in the conductivity characteristics of undoped a-Si:H-a comprehensive picture

3. The discontinuity in the conductivity characteristics of undoped a-Si:H: statistical shift or metastability?

4. Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma

5. Metastable effects in the dc conductivity of undoped glow discharge and sputtered hydrogenated amorphous silicon

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1. Investigating the role of hydrogen in silicon deposition using an energy-resolved mass spectrometer and a Langmuir probe in an Ar/H2 radio frequency magnetron discharge;Physics of Plasmas;2012-07

2. Role of carbon content in tuning the physical quantities of a-Si1-xCx:H alloys deposited by PECVD;physica status solidi (c);2010-12-22

3. The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B);physica status solidi (c);2010-01-20

4. Development of stabilized dual gap double junction a-Si solar cell using helium diluted a-Si : H intrinsic layer;Journal of Physics D: Applied Physics;2002-11-18

5. Effect of the Nature of the Hydrogen Bonding on the Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon Prepared by Radiofrequency Magnetron Sputtering;physica status solidi (b);2002-06