Influence of deposition parameters on defect formation in a-SiGe:H alloys
Author:
Affiliation:
1. a Energy Research Unit, Indian Association for the Cultivation of Science , Jadavpur, Calcutta , 700 032 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639508243591
Reference42 articles.
1. Bauer , G. H. Abel , C. D. and Schumm , G. 1992. PVSEC-6 Conference Proceedings, 339India: Oxford and IBH Publishing Co. p.
2. Influence of the defect concentration on the recombination in electron bombarded a-Si:Ge:H alloys studied by photoluminescence and electron spin resonance
3. Gap density of states in amorphous silicon‐germanium alloy: Influence on photothermal deflection spectroscopy and steady‐state conductivity measurements
4. Spin-dependent hole diffusion in a-Si: H
5. Defect states in a-Si1−xGex:H studied by electron spin resonance
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