Defect states in a-Si1−xGex:H studied by electron spin resonance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge Decomposition
2. Electron spin resonance (ESR and LESR) studies in a-Si1−xGex:H
3. The influence of spin defects on recombination and electronic transport in amorphous silicon
4. Hydrogen evolution from a-Si:C:H and a-Si:Ge:H alloys
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1. Investigation of light induced degradation in hydrogenated amorphous silicon-germanium alloy thin films using temperature dependent photoconductivity;physica status solidi (c);2010-02-23
2. The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon–germanium (a-SiGe:H) alloy thin films;Journal of Materials Science: Materials in Electronics;2009-04-18
3. Variation of spin densities and the solid-phase crystallization of amorphous Si1−xGex:H films;Journal of Applied Physics;2001-09-15
4. The solid-phase crystallization mechanism of hydrogenated amorphous silicon–germanium alloy films;Journal of Non-Crystalline Solids;2000-07
5. Defects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals;Europhysics Letters (EPL);1997-10-15
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