Electron spin resonance (ESR and LESR) studies in a-Si1−xGex:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Electronic Properties of Amorphous SixGe1−x:H Films
2. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure
3. ESR studies on sputtered amorphous SiC, SiGe and GeC films
4. ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge Decomposition
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1. Compensation of Native Defect Acceptors in Microcrystalline Ge and Si$_{1-x}$Ge$_{x}$ Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance;Japanese Journal of Applied Physics;2012-09-03
2. Compensation of Native Defect Acceptors in Microcrystalline Ge and Si1-xGexThin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance;Japanese Journal of Applied Physics;2012-09-01
3. Electron spin resonance study of hydrogenated microcrystalline silicon–germanium alloy thin films;Journal of Non-Crystalline Solids;2008-05
4. Defects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals;Europhysics Letters (EPL);1997-10-15
5. Structural and vibrational properties of amorphousSi1−xGexalloys: Anab initiomolecular-dynamics study;Physical Review B;1997-10-15
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