Steady state and transient transport in a-Si, Ge : H, F alloys-Reference-Cited by-同舟云学术

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Steady state and transient transport in a-Si, Ge : H, F alloys

Published:1987-12 Issue: Volume:97-98 Page:1023-1026
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Aljishi S.,Chu V.,Smith Z.E.,Shen D.S.,Conde J.P.,Slobodin D.,Kolodzey J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Electronic States In Glow-Discharge a-SiGex:H:(F) Alloys

2. Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloys

3. Electron-spin-resonance study of boron-doped amorphousSixGe1−x: H alloys

4. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells;Solar Energy Materials and Solar Cells;2004-01

2. Transient photocurrent in hydrogenated amorphous silicon and implications for photodetector devices;Journal of Applied Physics;1996

3. Effects of hydrogen dilution of silane/methane gas mixtures on growth and structure of a-Si1−xCx:H alloys;Solid State Communications;1995-10

4. Carrier lifetime in amorphous semiconductors;Journal of Applied Physics;1994-06

5. Properties of amorphous silicon/amorphous silicon‐germanium multilayers;Journal of Applied Physics;1994-02

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