Electron-spin-resonance study of boron-doped amorphousSixGe1−x: H alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.3595/fulltext
Reference39 articles.
1. Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge
2. Photoinduced Optical Absorption in AmorphousSixGe1−x:H
3. Electronic Properties of Amorphous SixGe1−x:H Films
4. Amorphous SiGe: H for High Performance Solar Cells
5. Dark conductivity and photoconductivity of hydrogenated amorphous Si1−xGexalloys
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2. Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
3. Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures;Journal of Applied Physics;2012-10
4. BASIC PROPERTIES OF HYDROGENATED AMORPHOUS SILICON (a-Si:H);Thin-Film Silicon Solar Cells;2010-08-19
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