Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation-Reference-Cited by-同舟云学术

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Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation

Published:2012-07 Issue:7 Volume:167 Page:506-511
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Devaraju G.,Nageswara Rao S. V.S.,Rao N. Srinivasa,Saikiran V.,Chan T. K.,Osipowicz T.,Breese M. B.H.,Pathak A. P.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2012.662977

Reference26 articles.

1. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

2. Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

3. Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer

4. Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

5. Optimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys;Physica Scripta;2024-05-31

2. Structural and mechanical modifications of GaN thin films by swift heavy ion irradiation;Vacuum;2022-01

3. Outstanding Reliability of Heavy-Ion-Irradiated AlInN/GaN on Silicon HFETs;IEEE Transactions on Nuclear Science;2019-12

4. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-03

5. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si9+ swift heavy ions;Journal of Alloys and Compounds;2016-09

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