Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2089175
Reference17 articles.
1. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy
2. 9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates
3. Cavity Polaritons in InGaN Microcavities at Room Temperature
4. Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
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