Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates-Reference-Cited by-同舟云学术

Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates

Published:2017-04-28 Issue:20 Volume:50 Page:205107
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Magalhães S,Franco N,Watson I M,Martin R W,O’Donnell K P,Schenk H P D,Tang F,Sadler T C,Kappers M J,Oliver R A,Monteiro T,Martin T L,Bagot P A J,Moody M P,Alves E,Lorenz K

Funder

European Research Council

Engineering and Physical Sciences Research Council

Fundação para a Ciência e a Tecnologia

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/50/i=20/a=205107/pdf

Reference71 articles.

1. III-Nitride Semiconductors and their Modern Devices

2. Band gaps of InN and group III nitride alloys

3. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

4. Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

5. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

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