Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

Published:2005-01-03 Issue:1 Volume:86 Page:011114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Skierbiszewski C.,Wasilewski Z. R.,Siekacz M.,Feduniewicz A.,Perlin P.,Wisniewski P.,Borysiuk J.,Grzegory I.,Leszczynski M.,Suski T.,Porowski S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1846143

Reference19 articles.

1. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

2. Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

3. Group-III nitride quantum heterostructures grown by molecular beam epitaxy

4. Growth and device applications of III-nitrides by MBE

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