Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure-Reference-Cited by-同舟云学术

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Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

Published:1999-07-26 Issue:4 Volume:75 Page:581-583
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kneissl Michael,Bour David P.,Van de Walle Chris G.,Romano Linda T.,Northrup John E.,Wood Rose M.,Teepe Mark,Johnson Noble M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124448

Reference10 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

3. Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

4. Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate

5. Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

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2. A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN;Applied Physics Letters;2015-10-12

3. InGaN tandem blue–violet quantum well lasers with high frequency self-pulsations;Optical and Quantum Electronics;2014-06-17

4. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01

5. Nitride-Based Light-Emitting Diodes and Nitride-Based Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy;Lattice Engineering;2012-11-27

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