Growth and device applications of III-nitrides by MBE

Author:

Moustakas T.D,Iliopoulos E,Sampath A.V,Ng H.M,Doppalapudi D,Misra M,Korakakis D,Singh R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference44 articles.

1. J.I. Pankove, T.D. Moustakas (Eds.), Semiconductors and Semimetals, Vol. 50, Gallium nitride (GaN) I, Academic Press, New York, 1998.

2. J.I. Pankove, T.D. Moustakas (Eds.), Semiconductors and Semimetals, Vol. 57, Gallium nitride (GaN) II, Academic Press, New York, 1999.

3. A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

4. MBE growth and doping of III–V nitrides

5. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

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