MBE growth and doping of III–V nitrides-Reference-Cited by-同舟云学术

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MBE growth and doping of III–V nitrides

Published:1998-06 Issue: Volume:189-190 Page:349-353
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ng H.M,Doppalapudi D,Korakakis D,Singh R,Moustakas T.D

Funder

Advanced Research Projects Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

3. GaN Growth Using GaN Buffer Layer

4. Growth of GaN by ECR-assisted MBE

5. A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

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2. Emerging Applications of III‐Nitride Nanocrystals;physica status solidi (a);2020-02-25

3. Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact;Coatings;2019-04-28

4. MBE of III-Nitride Semiconductors for Electronic Devices;Molecular Beam Epitaxy;2019-02-08

5. InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer;Optical Materials Express;2018-06-08

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