InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer
Author:
Funder
Innovation Fund Denmark
National Natural Science Foundation of China (NSFC)
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
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