Optimized growth of lattice-matched InxAl1−xN∕GaN heterostructures by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2430940
Reference10 articles.
1. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
2. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
3. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
4. Progress in AlInN–GaN Bragg reflectors: Application to a microcavity light emitting diode
5. Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy
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