Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si9+ swift heavy ions-Reference-Cited by-同舟云学术

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Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si9+ swift heavy ions

Published:2016-09 Issue: Volume:679 Page:94-103
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Arivazhagan P.,Ramesh R.,Balaji M.,Asokan K.,Baskar K.

Funder

Department of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference17 articles.

1. Radiation effects in AlGaN/GaN and InAlN/GaN high electron mobility transistors;Pearton;ECS Trans.,2015

2. Recent progress in AlGaN- based deep-UV LEDs;Hirayama;Electron. Commun. Jpn.,2015

3. Superior radiation resistance of In1−xGaxN alloys: full-solar-spectrum photovoltaic material system;Wu;J. Appl. Phys.,2003

4. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications;Sowers;Appl. Phys. Lett.,1997

5. Surface acoustic wave propagation in aluminum nitride-unpolished freestanding diamond structures;Mortet;Appl. Phys. Lett.,2002

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs);Journal of Applied Physics;2018-12-07

2. Circular Transmission Line Measurement (CTLM) Studies on Epitaxial Layers of AlGaN;Materials Today: Proceedings;2018

3. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-03

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