A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology
Author:
Funder
Babol Noshirvani University of Technology
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://link.springer.com/content/pdf/10.1007/s13369-022-06821-6.pdf
Reference35 articles.
1. Abbasian, E.; Izadinasab, F.; Gholipour, M.: A reliable low standby power 10T SRAM cell with expanded static noise margins. IEEE Trans Circuits Syst I Regular Paper, 69(4), 1606–1616 (2022)
2. Ahmad, S.; Alam, N.; Hasan, M.: Pseudo-differential multi-cell upset immune robust SRAM cell for ultra-low power applications. AEU-Int. J. Electron. Commun. 83, 366–375 (2018)
3. Sharma, D.; Birla, S.: 10T FinFET based SRAM cell with improved stability for low power applications. Int. J. Electron. pp. 1–16, (2021)
4. Abbasian, E.; Gholipour, M.; Birla, S.: Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM, Microelectron. J. 123, 105427 (2022)
5. Eslami, N.; Ebrahimi, B.; Shakouri, E.; Najafi, D.: A single-ended low leakage and low voltage 10T SRAM cell with high yield. Analog Integr. Circ. Sig. Process 105, 263–274 (2020)
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