Single ended 12T cntfet sram cell with high stability for low power smart device applications

Author:

Jayanthi S.ORCID,Raja P.ORCID,Elangovan M.ORCID,Murugesh T.S.

Publisher

Elsevier BV

Reference34 articles.

1. A single-bitline 9t SRAM for low-power near-threshold operation in FinFET technology;Abbasian;Arab. J. Sci. Eng.,2022

2. Design of low power, variation tolerant single bitline 9T SRAM cell in 16-nm technology in subthreshold region;Roy,2021

3. Impact of strongback on structure with varying damper and stiffness irregularity arrangements;Abolghasemi;J. Construct. Steel Res.,2024

4. Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications;Abbasian;AEU Int. J. Electr. Commun.,2021

5. High stability and low-power dual supply-stacked CNTFET SRAM cell;Elangovan;J. Circuits, Syst. Comput.,2019

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