A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM
Author:
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00034-024-02718-x.pdf
Reference28 articles.
1. E. Abbasian, A highly stable low-energy 10T SRAM for near-threshold operation. IEEE Trans. Circuits Syst. I Regul. Pap.Circuits Syst. I Regul. Pap. 69(12), 5195–5205 (2022)
2. E. Abbasian, M. Gholipour, S. Birla, A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology. Arab. J. Sci. Eng. 47, 14543–14559 (2022)
3. E. Abbasian, F. Izadinasab, M. Gholipour, A reliable low standby power 10T SRAM cell with expanded static noise margins. IEEE Trans. Circuits Syst. I Regul. Pap.Circuits Syst. I Regul. Pap. 69(4), 1606–1616 (2022)
4. E. Abbasian, S. Sofimowloodi, Energy-efficient single-ended read/write 10T near-threshold SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. 70(5), 2037–2047 (2023)
5. S. Ahmad, M.K. Gupta, N. Alam, M. Hasan, Single-ended Schmitt-trigger-based robust low-power SRAM cell. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 24, 2634–2642 (2016)
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