Analytical modelling and design of 9T SRAM cell with leakage control technique
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/content/pdf/10.1007/s10470-019-01483-1.pdf
Reference26 articles.
1. Maroof, N., & Kong, B. (2017). 10T SRAM using half-VDD precharge and row-wise dynamically powered read port for low switching power and ultralow RBL leakage. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 25(4), 1193–1203.
2. Gupta, S., Gupta, K., & Pandey, N. (2017). A 32-nm Subthreshold 7T SRAM bit cell with read assist. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 25(12), 3473–3483.
3. Oh, T. W., et al. (2017). Power-gated 9T SRAM cell for low-energy operation. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 25(3), 1183–1187.
4. Senousy, R. E., Ibrahim, S., & Anis, W. (2016). Stability analysis and design methodology of near-threshold 6T SRAM cells. In 2016 28th International conference on microelectronics (ICM), Giza (pp. 225–228).
5. Arif, S., & Pal, S. (2015). Variation-resilient CNFET-based 8T SRAM cell for ultra-low-power application. In 2015 International conference on signal processing and communication engineering systems, Guntur (pp. 147–151).
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of dual port 9T SRAM cell with parallel processing and high performance computing;Physica Scripta;2024-08-20
2. Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology;ACM Transactions on Design Automation of Electronic Systems;2023-10-28
3. Performance evaluation of SRAM cell using FinFET;2022 3rd International Conference on Electronics and Sustainable Communication Systems (ICESC);2022-08-17
4. Performance Analysis of 9T SRAM using 180nm, 90nm, 65nm, 32nm, 14nm CMOS Technologies;International Journal of Electrical and Electronics Research;2022-06-30
5. A circuit-level methodology for leakage power reduction of high-efficient compressors in 22-nm CMOS technology;Analog Integrated Circuits and Signal Processing;2022-01-23
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3